Light-emitting element having a plurality of light-emitting structures

ABSTRACT

A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application a continuation application of U.S. patent applicationSer. No. 14/470,396, entitled “LIGHT-EMITTING ELEMENT HAVING A PLURALITYOF LIGHT-EMITTING STRUCTURES”, filed on Aug. 27, 2014, which claimspriority to and the benefit of Taiwan Application Serial Number102130742 filed on Aug. 27, 2013, which is incorporated by reference inits entirety.

BACKGROUND Technical Field

The present application discloses a light-emitting device comprising aplurality of light-emitting structures.

Description of the Related Art

As shown in FIG. 1A, optoelectronic devices, such as light emittingdiodes (LEDs), have been widely applied in optical displays, trafficsignals, data storage devices, communication systems, lighting devicesand medical instruments. Besides, the LED can be connected to andcombined with other components to construct a lighting device. FIG. 1Bshows a conventional art of a light-emitting device. As shown in FIG.1B, a light-emitting device 10 includes a submount 12 comprising acircuit, a solder 14 formed on the submount 12, wherein a light emittingdiode 1 is fixed on the submount 12 and electrically connected with thecircuit 12 by the solder, and electrical connections 16 used toelectrically connect electrodes 11 and 13 and the circuit 120 on thesubmount 12. The submount 12 can be a lead frame or a large mountingsubstrate.

SUMMARY

A light-emitting device comprises a first semiconductor layer having anuppermost surface and a bottommost surface opposite to the uppermostsurface; a first light-emitting structure, a second light-emittingstructure and a third light-emitting structure formed on the same firstsemiconductor layer, wherein the first semiconductor layer iscontinuous; a first trench formed between the first light-emittingstructure and the second light-emitting structure, comprising a bottomportion exposing a first surface of the first semiconductor layer; asecond trench formed between the second light-emitting structure and thethird light-emitting structure, comprising a bottom portion exposing thefirst surface of the first semiconductor layer; a third trench formed inone of the first, the second and the third light-emitting structures,exposing the first semiconductor layer and extending along a firstdirection, wherein the first direction is parallel with the firstsemiconductor layer; an insulating bridge part formed in the firsttrench and the second trench, connecting the first, the second and thethird light-emitting structures; a first electrode formed in the thirdtrench, electrically connecting to the first semiconductor layer; and asecond electrode, comprising a second pad formed on one of the first,the second and the third light-emitting structures and a secondextending part extending from the second pad; wherein the first, thesecond and the third trenches pass through the uppermost surface of thefirst semiconductor layer but does not extend to the bottommost surfaceof the first semiconductor layer; wherein the second extending part isformed on the insulating bridge part and extends to the first, thesecond and the third light-emitting structures.

A light-emitting device comprises a first semiconductor layer having anuppermost surface and a bottommost surface opposite to the uppermostsurface; a first light-emitting structure and a second light-emittingstructure formed on the same first semiconductor layer, wherein thefirst semiconductor layer is continuous; a first trench formed betweenthe first light-emitting structure and the second light-emittingstructure, comprising a bottom portion exposing a first surface of thefirst semiconductor layer; a first electrode formed on and electricallyconnecting to the first semiconductor layer; and a second electrodeformed on the second semiconductor layer, comprising a second pad and aplurality of second extending parts extending from the second pad;wherein the second pad is formed between the first and the secondlight-emitting structures, and the plurality of extending parts extendto the first and the second light-emitting structures, respectively;wherein the first trench pass through the uppermost surface of the firstsemiconductor layer but does not extend to the bottommost surface of thefirst semiconductor layer; wherein the first trench comprises an equalwidth from a top view.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top view of a conventional LED.

FIG. 1B shows a conventional light-emitting device.

FIG. 2A is a top view of a light-emitting device in accordance with oneembodiment of present disclosure.

FIG. 2B is a cross-sectional view of a light-emitting device disclosedin FIG. 2A.

FIGS. 2C˜2D show a method of manufacturing the light-emitting device inaccordance with one embodiment of present disclosure.

FIG. 2E is a luminous efficiency diagram of a conventional LED and alight-emitting device in accordance with one embodiment of presentdisclosure.

FIG. 2F is a cross-sectional view of a light-emitting device, along lineB-B, disclosed in FIG. 2A.

FIGS. 3A˜3B are top views of light-emitting devices in accordance withanother embodiments of present disclosure.

FIG. 3C is a cross-sectional view of the light-emitting device, alongline C-C′, disclosed in FIG. 3A.

FIGS. 4A˜4C are top views of light-emitting devices in accordance withanother embodiments of present disclosure.

FIGS. 5A˜5B are top views of light-emitting devices in accordance withanother embodiments of present disclosure.

FIG. 6 is a top view of a light-emitting device in accordance withanother embodiment of present disclosure.

FIG. 7 is a top view of a light-emitting device in accordance withanother embodiment of present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENTS

To better and concisely explain the disclosure, the same name or thesame reference number given or appeared in different paragraphs orfigures along the specification should has the same or equivalentmeanings while it is once defined anywhere of the disclosure.

FIG. 2A shows a top view of a light-emitting device in accordance withan embodiment of the present disclosure. FIG. 2B shows a cross-sectionalview taken along AA line of the light-emitting device in FIG. 2A. Asshown in FIG. 2B, the light-emitting device 2 includes a substrate 20, alight-emitting stack 22 formed on the substrate 20, and a transparentconductive layer 24 formed on the light-emitting stack 22. Thelight-emitting stack 22 includes a first semiconductor layer 220, anactive layer 222 and a second semiconductor layer 224 formed on thesubstrate 20 sequentially. A first trench 25 is formed in thetransparent conductive layer 24 and the light-emitting stack 22 so as toexpose a first upper surface 221 of the first semiconductor layer 220.In this manner, the light-emitting stack 22 and the transparentconductive layer 24 on the first semiconductor layer 220 are separatedinto a first light-emitting structure X and a second light-emittingstructure Y. In other words, the first and the second light-emittingstructures X, Y share the first semiconductor layer 220, but indifferent regions on the first semiconductor layer 220, eachlight-emitting structure X, Y respectively includes an active layer 222,a second semiconductor layer 224, and a transparent conductive layer 24.As shown in FIG. 2A, second trenches 27 are formed in the first and thesecond light-emitting structures X and Y respectively, and therefore thefirst upper surface 221 is exposed. A first electrode 21 is disposed onthe first upper surface 221 in the second trench 27, and the secondelectrode 23 is disposed on the transparent conductive layer 24. A firsttrench 25 is formed between the first light-emitting structure X and thesecond light-emitting structure Y, and the first electrode 21 and thesecond electrode 23 are both disposed on the outer region beyond thefirst trench 25. That is, no electrode is disposed in the first trench25. By such configuration, current is distributed in the first and thesecond light-emitting structures X and Y respectively and thereby toimprove the luminous efficiency of the light-emitting device 2, as shownin FIG. 2E. From the top view, the first and the second light-emittingstructures X, Y have the same pattern. In this embodiment, thelight-emitting structures having the same pattern indicates that thelight-emitting structures have rectangular shape with same size, sameelectrode layouts, and symmetrical locations of the electrodes, whichbenefit the current spreading and alignment during follow-up wirebonding process. FIG. 2F, a cross-sectional view taken across line B-Bof FIG. 2A, shows in more detail, cross-sectional views of second trench27 and first electrode 21 and their relative positions.

The first electrode 21 and/or the second electrode 23 are used toconnect to an external voltage. The material of the first electrode 21and the second electrode 23 can be transparent conductive material ormetal material. The transparent conductive material includes but is notlimited to ITO, InO, SnO, CTO, ATO, AZO, ZTO, GZO, IWO, ZnO, AlGaAs,GaN, GaP, GaAs, GaAsP, IZO, or diamond-like Carbon (DLC). The metalmaterial includes but is not limited to Al, Cr, Cu, Sn, Au, Ni, Ti, Pt,Pb, Zn, Cd, Sb, Co or alloy of the materials described above. The firstelectrode 21 includes a first pad 21A and a plurality of first extendingparts 21B which extending from the first pad 21A. And the secondelectrode 23 includes a second pad 23A and a plurality of secondextending parts 23B which extending from the second pad 23A. The firstpad 21A and the second pad 23A are used as wiring positions in follow-upwiring bonding process. A plurality of first extending parts 21B andsecond extending parts 23B are used to conduct current and improvecurrent spreading so as to enhance luminous efficiency of thelight-emitting device 2. At least one of the first extending parts 21Bis formed between the second extending parts 23B to spread currentuniformly and prevent current from concentrating in local area whichreduces the light-emitting area. The second semiconductor layer 224includes a first side 223 and a second side 225 opposite to the firstside 223. The first pad 21A is set close to the first side 223 and thesecond pad 23A is set close to the second side 225. A gap D is setbetween the first pad 21A and the first side 223. D is substantiallyequal to the size of the first pad 21A. For example, if the first pad21A is a circular shape, D is approximately the diameter of the circularshape; if the first pad is a rectangular shape, D is approximately thelength of the rectangular shape. Therefore, current flowing from thefirst pad 21A can be spread effectively so as to improve luminousefficiency of the light-emitting device 2. In another embodiment, thegap D is approximately 60 μm to 100 μm. Besides, at least one of thefirst extending parts 21B has different extending direction from thoseof other extending parts 21B. For example, one of the first extendingparts 21B extends to the first side 223 and other extending parts 21Bextend to the second side 225 to improve current spreading and luminousefficiency of the light-emitting device 2.

The transparent conductive layer 24 improves ohmic contact between thelight-emitting stack 22 and the second electrode 23 as well as currentspreading. The transparent conductive layer 24 is transparent to lightemitted from the light-emitting stack 22. The material of thetransparent conductive layer 24 can be conductive material whichincludes but is not limited to ITO, InO, SnO, CTO, ATO, AZO, ZTO, GZO,ZnO, MgO, AlGaAs, GaN, GaP or IZO. The material of the light-emittingstack 22 can be conductive material which includes one or more than oneelement selected form Ga, Al, In, P, N, Zn, Cd or Se. The polarities ofthe first semiconductor layer 220 and the second semiconductor layer 224are different to generate electrons and electron holes. In anotherembodiment, the second semiconductor layer 224 has a textured uppersurface in order to suppress total reflection so as to improve luminousefficiency of the light-emitting device 2. Moreover, the active layer222 emits one or more than one color light. The light can be visible orinvisible. The structure of the active layer 224 can be singleheterostructure (SH), double heterostructure (DH), double-side doubleheterostructure (DDH), multi-quantum well (MQW) or quantum dot.

The substrate 20 supports the light-emitting stack 22 and other layersor other structure which disposed thereon. The material of the substrate22 includes a transparent substrate or an electrically conductivesubstrate. The material of the transparent substrate includes but is notlimited to sapphire, diamond, glass, epoxy, quartz, acryl, Al₂O₃, ZnO orMN, etc. The material of the electrically conductive substrate can beCu, Al, Mo, Sn, Zn, Cd, Ni, Co, diamond like Carbon (DLC), Graphite,Carbon fiber, metal matrix composite (MMC), ceramic matrix composite(CMC), Si, IP, ZnSe, GaAs, SiC, GaP, GaAsP, InP, LiGaO₂ or LiAlO₂. Amongthese materials, sapphire, GaAs, SiC and Si can be used as a growthsubstrate. The substrate 20 has a patterned upper surface 200 which canimprove epitaxy quality and scattering the light emitted from thelight-emitting stack 22.

FIGS. 2C˜2D show a manufacturing process of a light-emitting device 2′in accordance with another embodiment. As shown in FIG. 2C, alight-emitting stack 22 is formed on a substrate 20. Then, a portion ofa second semiconductor layer 224 and an active layer 222 are removed toform a first trench 25 and a second trench 27. A first upper surface 221of a first semiconductor layer 220 is exposed, wherein the first trench25 separates the second semiconductor layer 224 and the active layer 222into a first light-emitting structure X and a second light-emittingstructure Y. The two second trenches 27 locate in the firstlight-emitting structure X and the second light-emitting structure Y,respectively. As shown in FIG. 2D, a transparent conductive layer 24 isformed on the second semiconductor layer 224. Then, first electrode 21is formed in the second trench 27 and a second electrode 23 is formed onthe transparent conductive layer 24 to form the light-emitting device2′.

FIG. 3A and FIG. 3B show top views of a light-emitting device 3 and 3′in accordance with another embodiment. As shown in FIG. 3A, thelight-emitting device 3 has a similar structure with the light-emittingdevice 2 and further includes a third trench 31 and a fourth trench 33to expose a first upper surface 221. The third trench 31 and the fourthtrench 33 are not parallel with the first trench 25 and the secondtrench 27 so that the third trench 31/the fourth trench 33 intersectsthe first trench 25/the second trench 27. Thus, the first light-emittingstructure X and the second light-emitting structure Y are separated intoa plurality of light emitting regions with smaller area. A plurality offirst bridge parts 30 is formed in the third trench 31 and the fourthtrench 33 and set between the light emitting regions in the first andthe second light-emitting structures X, Y. The first bridges are used toconnect the light emitting regions. As a result, the second extendingparts 23B cross over and pass through a plurality of the first bridgeparts 30 to extend to a plurality of the light emitting regions andconduct current into these light emitting regions. Since the first andthe second lighting structures X, Y are separated into a plurality oflight emitting regions with smaller area, current is uniformly conductedand spread into each light emitting region through a plurality of thesecond extending parts 23B so as to improve luminous efficiency of thelight-emitting device 3. FIG. 3C is a cross-sectional view taken acrossline C-C′ of FIG. 3A, It shows in more detail, cross-sectional views ofthird trench 31 and fourth trench 33 and their relative positions. Asshown in FIG. 3B, the light-emitting device 3′ has a similar structurewith the light-emitting device 2. Second trenches 27 separate the firstlighting structure X and the second lighting structure Y into aplurality of light emitting regions with smaller area. An insulatinglayer 32 is formed in the second trenches 27 and on the lighting regionsand is away from the first pads 21A. Second pads 23A are formed on theinsulating layer 32 and extend to a plurality of light emitting regionswith a smaller area. Since the first and the second light-emittingstructures X, Y are separated into a plurality of lighting regions witha smaller area, current is uniformly conducted into each light emittingregion with smaller area through a plurality of the second extendingparts 23B thereby luminous efficiency of the light-emitting device 3′ isimproved. In the embodiments described above, second electrodes 23 areinsulated from the first semiconductor 220 by the first bridge part 30and/or the insulating layer 32. The first bridge part 30 and/or theinsulating layer 32 can be made of electrically insulative material suchas polyimide (PI), Benzocyclobutene (BCB), Perfluorocyclobutane (PFCB),MgO, Sub, Epoxy, Acrylic resin, Cycle Olefin copolymer (COC),Polymethylmethacrylate (PMMA), Polyethylene terephthalate (PET),Polycarbonate (PC), Polyetherimide, Fluorocarbon Polymer, Glass, Al₂O₃,SiO_(x), TiO₂, Ta₂O₅, SiN_(x), MgF₂, Spin-on glass (SOG) or Tetraethylorthosilicate (TEOS).

FIG. 4A shows a top view of a light-emitting device 4 according toanother embodiment. The structure of the light-emitting device 4 issimilar with that of the light-emitting device 2. The light-emittingdevice 4 includes a substrate 20, a light-emitting stack 22 formed onthe substrate 20, and a transparent conductive layer 24 formed on thelight-emitting stack 22, wherein the light-emitting stack includes afirst semiconductor layer 220, an active layer 222 and a secondsemiconductor layer 224 sequentially formed on the substrate 20. Asshown in FIG. 4A, a first trench 41 is formed in the transparentconductive layer 24 and the light-emitting stack 22, and exposes a firstupper surface 221 so as to separates the transparent conductive layer 24and the light-emitting stack 22 on the first semiconductor layer 220into a first light-emitting structure X and a second light-emittingstructure Y. In this embodiment, the light-emitting stack 22 and thetransparent conductive layer 24 are not completely removed while formingthe first trench 41, and a portion of the light-emitting stack 22 andthe transparent conductive layer 24 are reserved to form a first bridgepart 40 which used to connect the first light-emitting structure X withthe second light-emitting structure Y. A first electrode 21 is formed inthe first trench 41; a second electrode 23 is formed on the first bridgepart 40 to conduct current into the first and the second light-emittingstructures X. Y. Since the first light-emitting structure X and thesecond light-emitting structure Y have smaller area of light emittingregion, current can be uniformly spread in the first and the secondlight-emitting structures X, Y and to improve luminous efficiency of thelight-emitting device 4. From the top view, the first light-emittingstructure X and the second light-emitting structure Y have the samepattern. In this embodiment, the light-emitting structures having thesame pattern indicate that the light-emitting structures haverectangular structures with same size, same electrode layouts, andsymmetrical locations of the electrodes. Such configuration benefits thecurrent spreading and alignment during follow-up wire bonding process.

FIG. 4B shows a top view of a light-emitting device 4′ according toanother embodiment. The light-emitting device 4′ has a similar structurewith that of the light-emitting structure 4 and further includes asecond trench 43 and a third trench 45 so as to expose a upper surface221. The second trench 43 and the third trench 45 are not parallel withthe first trench 41. The second trench 43 and the third trench 45 crossover the first trench 41 and thereby the first and the secondlight-emitting structures X, Y are separated into a plurality of lightemitting regions with smaller area. A plurality of second bridge parts42 is formed between the light emitting regions and locates in thesecond trench 43 and the third trench 45. The second bridge parts 42 areused to connect the light emitting regions. The second trench 43 ispartitioned into a first region 431 and a second region 432 by thesecond bridge parts 42. The second bridge part 42 locates between thefirst region 431 and the second region 432. The third trench 43 ispartitioned into a third region 451 and a fourth region 452 by thesecond bridge parts 42. The second bridge part 42 locates between thethird region 451 and the fourth region 452. In this embodiment, thelight-emitting stack 22 and the transparent conductive layer 24 are notcompletely removed while forming the second trench 43 and the thirdtrench 45. A portion of the light-emitting stack 22 and the transparentconductive layer 24 are reserved to form a second bridge part 42 whichused to connect the first light-emitting structure X with the secondlight-emitting structure Y. A plurality of second extending parts 23Bcrosses over and passes through a plurality of the second bridge parts42 to extend to the light emitting regions and conduct current intothese light emitting regions. Since the first light-emitting structure Xand the second light-emitting structure Y have smaller area of lightemitting regions, current can be uniformly spread by the secondextending part 23B in the first and the second light-emitting structuresX/Y and thereby luminous efficiency of the light-emitting device 4′ isimproved. As shown in FIG. 4C, the light-emitting device 4″ has similarstructure with that of the light-emitting structure 4 and furtherincludes an exposing part 47 surrounding the first light-emittingstructure X and the second light-emitting structure Y and exposing afirst upper surface 221. A portion of the exposing part 47 is notparallel with the first trench 41; another portion of the exposing part47 is parallel with the first trench 41. A second electrode 23 is formedon the first bridge part 40 and the first and the second light-emittingstructures X, Y. A first electrode 21 is formed on the exposing part 47,and a plurality of first extending parts 21B extends along the exposingpart 47. Current can be uniformly spread in the first and the secondlight-emitting structures X, Y, and thereby luminous efficiency of thelight-emitting device 4″ is improved.

FIG. 5A and FIG. 5B show top views of light-emitting devices 5 and 5′according to another embodiment. As shown in FIG. 5A, the structure ofthe light-emitting device 5 is similar to that of the light-emittingdevice 2. A first trench 50 is formed in the transparent conductivelayer 24 and the light-emitting stack 22, and exposes a first uppersurface 221 so as to separates the transparent conductive layer 24 andthe light-emitting stack 22 on the first semiconductor layer 220 intothe first light-emitting structure X and the second light-emittingstructure Y. In this embodiment, the light-emitting stack 22 and thetransparent conductive layer 24 are not completely removed while formingthe first trench 50, and a portion of the light-emitting stack 22 andthe transparent conductive layer 24 are reserved to form a first bridgepart 54 which used to connect the first light-emitting structure X withthe second light-emitting structure Y. Second trenches 27 are formed inthe first and the second light-emitting structures and expose the firstupper surface 221. A first electrode 21 is formed on the first uppersurface 221 in the second trench 27; a second electrode 23 is formed onthe transparent conductive layer 24. A third trench 52 is formed in thetransparent conductive layer 24 and the light-emitting stack 22 so thatthe first upper surface 221 is exposed. The third trench 52 is notparallel with the first trench 50 and intersects the first trench 50. Afirst connecting line 51 is formed in the third trench 52 andelectrically connects the first pads 21A in the first and the secondlight-emitting structures X, Y. A second connecting line 53 is formed onthe first bridge part 54 and the first and the second light-emittingstructures X, Y. The second connecting line 53 is used to electricallyconnect the second pads 23A in the first and the second light-emittingstructures X, Y. The first and the second connecting lines connect thepads in the first and the second light-emitting structures X, Y.Therefore, current can be uniformly spread in the light-emittingstructures X, Y so as to improve luminous efficiency of thelight-emitting device 5. From the top view, the first light-emittingstructure X and the second light-emitting structure Y have the samepattern. In this embodiment, the light-emitting structures having thesame pattern indicate that the light-emitting structures haverectangular structures with same size, same electrode layouts, andsymmetrical locations of the electrodes. Such configuration benefits thecurrent spreading and alignment during follow-up wire bonding process.As shown in FIG. 5B, the structure of the light-emitting device 5′ issimilar to that of the light-emitting device 5. The third trench 52 isformed in the first and the second light-emitting structures X, Y andnear a first side 223 so a smaller area of the light-emitting stack 22is removed for forming the third trench 52 and the light-emitting areais not decreased further.

FIG. 6 shows a top view of a light-emitting device 6 in accordance withanother embodiment. As shown in FIG. 6, the light-emitting device 6 hasa similar structure to that of the light-emitting device 2. A firsttrench 60 is formed in the transparent conductive layer 24 and thelight-emitting stack 22 and exposes the first upper surface 221 so as toseparate the transparent conductive layer 24 and the light-emittingstack 22 on the first semiconductor layer 220 into the firstlight-emitting structure X and the second light-emitting structure Y.Second trenches 62 are formed in the first and the second light-emittingstructures X, Y and expose the first upper surface 221. An exposing part64 surrounds the first light-emitting structure X and the secondlight-emitting structure Y and exposes the first upper surface 221. Aportion of the exposing part 64 is not parallel with the first trench60; another portion of the exposing part 64 is parallel with the firsttrench 60. Second electrodes 23 are formed on the first and the secondlight-emitting structures X, Y. First pads 21A are formed on theexposing part 64, and a plurality of first extending parts 21B extendsalong the exposing part 64 and the first trench 60. Current can beuniformly spread in the first and the second light-emitting structuresX, Y and luminous efficiency of the light-emitting device 6 is improved.From the top view, the first light-emitting structure X and the secondlight-emitting structure Y have the same pattern. In this embodiment,the light-emitting structures having the same pattern indicate that thelight-emitting structures have rectangular structures with same size,same electrode layouts, and symmetrical locations of the electrodes.Such configuration benefits the current spreading and alignment duringfollow-up wire bonding process.

FIG. 7 shows a light bulb. The light bulb 7 includes a cover 71, a lens72 set in the cover 71, a light emitting module 74 formed under the lens72, a lamp holder 75 which is used to support the light emitting module74 including a heat sink 76, a connecting part 77, and an electricalconnector 78. The connecting part 77 connects the lamp holder 75 and theelectrical connector 78. The light-emitting module 74 includes a carrier73 and a plurality of light-emitting devices according to any of theembodiments described above formed on the carrier 73.

It will be apparent to those having ordinary skill in the art thatvarious modifications and variations can be made to the devices inaccordance with the present disclosure without departing from the scopeor spirit of the disclosure. In view of the foregoing, it is intendedthat the present disclosure covers modifications and variations of thisdisclosure provided they fall within the scope of the following claimsand their equivalents.

What is claimed is:
 1. A light-emitting device, comprising: a firstsemiconductor layer having an uppermost surface and a bottommost surfaceopposite to the uppermost surface; a first light-emitting region, asecond light-emitting region, and a third light-emitting region formedon the same first semiconductor layer, wherein the first semiconductorlayer is continuous; a first trench formed between the firstlight-emitting region and the second light-emitting region, comprising abottom portion exposing a first surface of the first semiconductorlayer; a second trench formed between the second light-emitting regionand the third light-emitting region, comprising a bottom portionexposing the first surface of the first semiconductor layer; a thirdtrench formed in one of the first, the second and the thirdlight-emitting regions, exposing the first semiconductor layer andextending along a first direction, wherein the first direction isparallel with the uppermost surface of the first semiconductor layer; aninsulating bridge part formed in the first trench and the second trench,connecting the first, the second, and the third light-emitting regions;a first electrode formed in the third trench, electrically connecting tothe first semiconductor layer; and a second electrode, comprising asecond pad formed on one of the first, the second, and the thirdlight-emitting regions and a second extending part extending from thesecond pad; wherein the first, the second and the third trenches passthrough the uppermost surface of the first semiconductor layer but doesnot extend to the bottommost surface of the first semiconductor layer;wherein the second extending part is formed on the insulating bridgepart and extends to the first, the second, and the third light-emittingregions.
 2. The light-emitting device of claim 1, wherein the firstlight emitting region and the second light emitting region comprise: anactive layer on the first semiconductor layer; a second semiconductorlayer on the active layer; and a transparent conductive layer on thesecond semiconductor layer.
 3. The light-emitting device of claim 1,wherein the first electrode comprises a first pad and a first extendingpart extending from the first pad.
 4. The light-emitting device of claim1, wherein the first electrode comprises an extending direction parallelto the third trench.
 5. The light-emitting device of claim 3, furthercomprising a first side, a second side, a third side, and a fourth side,wherein the first side is opposite to the third side and the second sideis opposite to the fourth side; wherein the first pad is adjacent to thefirst side and the second pad is adjacent to the third side.
 6. Thelight-emitting device of claim 1, wherein the second electrode comprisesa plurality of second extending parts, wherein the first electrode islocated between the second extending parts.
 7. The light-emitting deviceof claim 1, wherein the first trench comprises an equal width from a topview.
 8. The light-emitting device of claim 1, wherein the first trenchand/or the second trench is devoid of the first electrode formedtherein.
 9. The light-emitting device of claim 1, further comprising anexposing part surrounding the first light emitting region, the secondlight emitting region, and the third light emitting region.